| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent a lower electrode from being oxidized by forming a dielectric layer and performing a curing process before the lower electrode is fabricated. CONSTITUTION: An insulating layer is formed on a semiconductor substrate(21) and selectively patterned to form a contact hole. A plug layer(24) is formed to bury the contact hole. An insulating pattern layer is formed on the plug layer. A dielectric layer(26) is formed on the entire surface, and a curing process is carried out. An upper electrode layer of a capacitor is formed between the insulating pattern layers having the dielectric layer, and the insulating pattern layers are eliminated. A lower electrode layer of the capacitor is formed in a portion where the insulating pattern layer is eliminated.
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