MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY PROVIDED WITH THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which has a magnetoresistance ratio which dependent less on the bias voltage of a ferromagnetic tunnel junction and is high in serviceability. SOLUTION: A magnetoresistive effect element is possessed of a ferromagnetic double tunnel junction, which contains a five-layered structure composed of a ferromagnetic layer 4, tunnel barrier 5, ferromagnetic layer 6, tunnel barrier 7, and ferromagnetic layer 8, where tunnel conductance changes with the relative angles of the magnetization of the three ferromagnetic layers 4, 6, and 8. In the above magnetoresistive effect device, tunnel conductance increases as the exponential function at a cryogenic temperature of 4.2 K or so with an increase in a bias voltage of zero or so.