| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode of a low forward-direction voltage and small inverse leakage current by improving the tradeoff relationship between a forward-direction characteristics and revise-direction characteristics. SOLUTION: A lower-part n- layer 12 of high specific resistance, intermediate n-layer 13 of low specific resistance, and upper-part n- layer 14 of high specific resistance are formed on an n+ cathode layer 11 of low specific resistance. In the intermediate n-layer 13 of low specific resistance, p-regions 15 are formed at specified intervals, protruding slightly into the upper-part n- layer 14 of high specific resistance. An anode electrode film 20 is subjected to ohmic junction to a surface n+ region 16 formed on the surface layer above the upper-part n- layer 14, while being under to the p-region 15 as well at a part (not shown). A cathode electrode film 19 is formed on the rear surface of the n+ cathode layer 11.
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