METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent residue in a peripheral region, by forming a plug pad in a cell region after completely eliminating an anti-reflecting coating(ARC) layer while using a plasma etching process of a down stream type. CONSTITUTION: A cell region(C) and a peripheral region(P) are defined in a semiconductor substrate. A gate oxide layer(21) is formed under the cell region and the peripheral region. A gate electrode(22) having a mask insulating layer(23) is formed on the cell region and the peripheral region. An insulating layer spacer(24) is formed on a sidewall of the gate electrode and the mask insulating layer. A polysilicon layer(25) is formed on the entire substrate. A diffused reflection layer(26) is formed on the polysilicon layer. The diffused reflection layer in the peripheral region is firstly etched. The diffused reflection layer and the polysilicon layer are secondly etched to form a plug pad(200) in the cell region and expose the substrate in the peripheral region.