Post-ashing treating method for substrates

摘要

A post-ashing treating method for substrates comprising the following steps: forming a photoresist layer on a substrate having metallic layer(s) thereon; selectively exposing the photoresist layer to light; developing the light-exposed photoresist layer to provide a photoresist pattern; etching the substrate through the photoresist pattern as a mask pattern to form a metallic wired pattern; ashing the photoresist pattern; and after the completion of the ashing, bringing the substrate into contact with a treating liquid composition to thereby treat the substrate; characterized in that said treating liquid composition is one which comprises: (a) 0.5-10 wt % of a lower alkyl quaternary ammonium salt; (b) 1-50 wt % of a polyhydric alcohol; and (c) water as the balance. The post-ashing treating method for substrates provided by the present invention makes it possible to efficiently remove residues formed by dry etching followed by ashing under strict conditions and to achieve favorable corrosion-inhibiting effects on the substrates.