| 摘要 |
PROBLEM TO BE SOLVED: To improve an elevated source/drain type MOSFET structure. SOLUTION: A metal oxide film semiconductor field effect transistor(MOSFET) device comprising an elevated source 29 and drain 30 is manufactured. An MOSFET region is formed on the surface of a silicon substrate 18, and a central section in the MOSFET region is removed by etching to a prescribed depth. The sections on both sides of the recessed pat are doped to form a drain and a source, providing the active channel of a MOSFET device located below the base of recessed part as a whole.
|
