Integrated semiconductor memory with redundant memory cell devices and method for operating it causes memory cells to combine in standard devices with single addresses and a redundant device to replace one of the standard devices.

摘要

Memory cells combine in standard devices with single addresses and a redundant device (RWL) to replace one of the standard devices. One address for the standard device to be replaced by the redundant device is stored in programmable elements (F). For a standard device to be selected (WL4) memory picks up an address that is compared to a stored address and with a positive match the standard device to be selected is activated along with the redundant device.