发明名称 PULSE SWITCH CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A pulse switch circuit for a semiconductor memory device is provided to secure sufficient switching time to stabilize a circuit operation by processing output signal with feed-back process to minimize effect of loading value of an output terminal and removing large time delayed circuit. CONSTITUTION: A pulse switch circuit for a semiconductor memory device comprises a first/second logic unit connected between an input terminal and a first/second output terminal, an inverter unit(26) for inverting the output signal of the first logic unit so as to input the inverted signal to the second logic unit, and a delay unit for delaying output signal of the second logic unit to input the delayed signal to the first logic unit. The output signal of the first/second logic unit is delayed for some time and is outputted according to enable signal, input pulse, inverted enable signal and pumping voltage.
申请公布号 KR100290472(B1) 申请公布日期 2001.03.02
申请号 KR19980010531 申请日期 1998.03.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, HAN GUK
分类号 H03K19/00;(IPC1-7):H03K19/00 主分类号 H03K19/00
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