发明名称 Surface acoustic wave device comprising langasite single crystal substrate
摘要 A surface acoustic wave device including a substrate and an electrode structure formed on the substrate, said substrate being made of a doubly rotated Y-cut (alphaX-thetaY cut) Langasite (La3Ga5SiO14), a rotation angle alpha from the X axis being substantially 50°±5° and a rotation angle theta from the Y axis being substantially 19°-30°. The device further includes a normal type electrode structure which reveals a natural single-phase unidirectional transducer property together with an anisotropy of the substrate. The device further has a double electrode type electrode structure which cancels the directionality, or a floating type electrode structure which reverses the directionality. The electrode structure is formed to constitute a surface acoustic wave filter having a low insertion loss and an excellent phase property.
申请公布号 US6194809(B1) 申请公布日期 2001.02.27
申请号 US19990401406 申请日期 1999.09.22
申请人 NGK INSULATORS, LTD.;MASAO TAKEUCHI 发明人 TAKEUCHI MASAO;TANAKA MITSUHIRO
分类号 H03H9/145;H03H9/02;H03H9/25;(IPC1-7):H03H9/25 主分类号 H03H9/145
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