| 摘要 |
PURPOSE: To provide a semiconductor device which includes a capacitor having a predetermined capacitor characteristic. CONSTITUTION: The device is a semiconductor device having a stacked capacitor. A major part 40 of the device includes a first interlayer insulating film 44, a capacitive contact 46, a second interlayer insulating film 48, a capacitive insulating film 52 and an upper electrode 54 formed on a silicon substrate 42. A lower electrode has a recess 56 buried in the second interlayer film 48 and has an outer sectional contour of a trapezoid, and the recess has a hollow sectional contour having a bottom extended from both ends of its trapezoidal upper side to its lower side. In other words, the lower electrode is formed as an island-like projection on the capacitive contact, and the recess is formed as a bottomed hollow opened exactly with the upper surface of the island-like projection. A bottom of the recess is made up of two layers of a barrier metal layer 58 and a first Ir electrode layer 60. A side of the recess is a second electrode layer 62 of Ru. A BST film is formed on the recess wall as a capacitive insulating film.
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