| 摘要 |
<p>PROBLEM TO BE SOLVED: To actualize the structure of a light emitting element, wherein light emitted by an active layer of the light emitting element having an active layer formed of a quaternary compound semiconductor InGaAlP is efficiently taken out, without being absorbed by a GaAs substrate, and its manufacturing method with a good non-defective rate. SOLUTION: A composite light emitting element is composed of a semiconductor light emitting element and a submount element 2, which electrically connects and mounts it in combination therewith. An active layer 8 is formed of InGaAlP and the semiconductor laminate structure has no GaAs included in surfaces up to a main light guide-out surface, and n-side and p-side electrodes 11 and 12 provide in the semiconductor light emitting element 1 are provided on the side of the mount surface on the submount element 2 to secure the light emission area of a main light guide-out surface, thereby increasing the light extraction efficiency.</p> |
