| 摘要 |
PURPOSE: A method of manufacturing a silicon on insulator wafer is to perform an unselective polishing using a slurry at the same time of forming a flowable oxide film on a semiconductor substrate, thereby obtaining a uniform thickness of the semiconductor layer. CONSTITUTION: A method of manufacturing a silicon on insulator wafer comprises the steps of: bonding a base substrate(11) to a silicon substrate via a buried oxide film(12); grinding a portion of the silicon substrate; forming a silicon pattern separately disposed with a predetermined distance by etching the silicon substrate; depositing the first oxide film(15) and the second flowable oxide film(16) on the silicon pattern and the buried oxide film; polishing the first and second oxide film and the silicon pattern using a non-selective polishing; and forming a semiconductor layer(17) with an element-separating film.
|
