Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas

摘要

The invention relates to a method for etching a substrate (10), especially a silicon body, by means of an inductively coupled plasma (14) and to a device for the implementation of said method. To this end, a high-frequency electromagnetic alternating field is generated with an ICP source (13). Said field produces an inductively coupled plasma (14) consisting of reactive particles in a reactor (15). The inductively coupled plasma (14) is produced by the effect of the high-frequency electromagnetic alternating field on a reactive gas. A device is also provided by means of which the plasma power coupled with the ICP source (13) into the inductively coupled plasma (14) by means of the high-frequency electromagnetic alternating field can be pulsed in such a way that a pulsed high-frequency power can be coupled at least temporarily as plasma power into the inductively coupled plasma. The pulsed plasma power can also be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.