发明名称 Structure and fabrication method for multiple crown capacitor
摘要 A multiple crown capacitor and a method of fabricating such a capacitor is described. The method is applicable to a substrate in which an isolation layer is formed on the substrate, with a node contact plug formed in the isolation layer. A sacrificial layer is then formed on the substrate followed by a patterning of the sacrificial layer to form a succession of openings above the node contact plug and its surroundings, exposing the isolation layer and a portion of the node contact plug upper surface. Thereafter, a conformal conductive layer is formed on the sacrificial layer and in the openings. A portion of the conductive layer, which is higher than the sacrificial layer, is removed, followed by removing the sacrificial layer to form a bottom electrode. A conformal dielectric layer and an upper electrode are sequentially formed on the bottom electrode to complete the formation of the capacitor. The structure of the capacitor includes a bottom electrode, which comprises a succession of openings on the upper surface of the bottom electrode. The bottom electrode is located on the node contact plug and is electrically connected to the node plug. A conformal dielectric layer and an upper electrode are sequentially formed on the bottom electrode.
申请公布号 US6180483(B1) 申请公布日期 2001.01.30
申请号 US19990371728 申请日期 1999.08.10
申请人 WORLDWIDE SEMICONDUCTOR MANUFACTURING CORP. 发明人 LINLIU KUNG
分类号 H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20;H01L82/42 主分类号 H01L21/02
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