| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a landing contact plug without an additional mask process by using an insulating layer pattern as an isolation mask. CONSTITUTION: An insulating layer pattern for exposing an isolation region is formed on an upper portion of a semiconductor substrate(11). A trench is formed by etching the semiconductor substrate(11). An isolation layer(25) is formed to bury the trench. The insulating layer pattern is etched by using the gate electrode mask as an etching mask and a gap is formed therefrom. A gate insulating layer(27) and a gate electrode are formed to bury the gap. A mask insulating layer having an etching selection ratio for the insulating pattern is formed on an upper portion of the whole structure. An insulating mask layer pattern(31) is formed by etching the insulating mask layer. A stacked structure including the isolation layer(25), the gate insulating layer(27), the gate electrode, and the insulating mask layer pattern(31) is projected by removing the insulating layer pattern. An insulating layer spacer is formed on the isolation layer(25) and a sidewall of the layer-built structure. A conductive layer(29) for landing contact plug is formed on a surface of the whole structure. A landing contact plug(35) is formed by etching the conductive layer(29) for landing contact plug.
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