| 摘要 |
PURPOSE: A method is provided to protect a data bus line from a damage cause by an ITO etchant during patterning of ITO metal film. CONSTITUTION: A method comprises the steps of forming, onto an insulation substrate(1), a thin film transistor(20) by forming a data bus line with a source electrode(7) and a drain electrode(8) which are disposed onto an etch stopper(6) and an ohmic layer(5) and electrically separated, forming a protective film(9) onto the resultant structure, and forming a contact hole for exposing the source electrode of the thin film transistor by etching the protective film, forming an ITO metal film onto the protective film, and patterning the ITO metal film so as to form a pixel electrode(10). The step of patterning the ITO metal film includes a wet etching process using an etchant composed of 15 to 19 weight % HCl, 6 to 8 weight % CH3COOH, 11 to 16 weight % Al2(SO4)3, and 57 to 68 weight % water(H2O).
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