| 摘要 |
PROBLEM TO BE SOLVED: To avoid leaving etching residual conductor particles on a substrate by coating a conductive paste on the surface of a wafer before drying it, performing a first sintering process, and performing a second sintering process at a temperature higher than that of the first one. SOLUTION: A conductive paste is coated on one surface of a wafer 1 to form a conductive film 21. Then the conductive film 21 which is coated is dried, de-bound, and sintered for the first time. The sintering temperature for the first time is preferred to be 500 to 800 deg.C. A photo-lithography technology is used as a pattern forming means. A second sintering is performed at a temperature higher than the first one with the conductive film 21. A second conductive film is formed by wet-plating method on the conductive film 21 as required.
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