| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an ultraminiature electronic device which uses the steps of a photolithography as little as possible, especially an optoelectronic device. SOLUTION: For a semiconductor substrate 2, this method comprises the steps of etching at least one groove having preliminarily decided width and depth, and a step for accumulating a laminated layer constituted of continuous Si1-xGex (0<x<=1) and an Si layers 5-8 on the substrate and the groove, and for accumulating the laminated layer in the number and thickness depending on the final use of an intended heterostructure, and a step for executing chemical-mechanical grinding for obtaining a final heterostructure having a flat upper side main surface, and for making uniform the height of the laminated layers accumulated in the groove. Thus, this method can be applied to an ultraminiature electronic engineering. |
