摘要 |
A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10 DIFFERENCE 40 wt % of water-soluble amine compound; 20 DIFFERENCE 50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10 DIFFERENCE 30 wt % of water; 0.1 DIFFERENCE 10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1 DIFFERENCE 10 wt % of triazole compound; and 0.01 DIFFERENCE 1 wt % of silicone surfactant. Therefore, the photoresist remover composition can easily remove, at a low temperature and in a short time, a photoresist layer which has been cured during hard baking, dry etching, ashing and/or ion-implantation processes, and the potoresist layer cross-linked by a metallic contaminants shed from a lower metal layer during these processes. Also, corrosion of the lower metal pattern during the photoresist removal process can be minimized.
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申请人 |
DONGJIN SEMICHEM CO., LTD. |
发明人 |
BAIK, JI-HUM;OH, CHANG-IL;LEE, SANG-DAI;KIM, WON-LAE;YOO, CHONG-SOON |