| 摘要 |
PURPOSE: A method for coating a mirror facet of a semiconductor laser diode is provided to prevent a mirror facet of an opposite plane to a laser diode bar from being damaged. CONSTITUTION: A method for coating a mirror facet of a semiconductor laser diode comprises cutting a wafer so as to have a laser diode form having a constant cavity length. An InP substrate of a thickness of 100 micrometers is formed by polishing the substrate, and then a dummy bar is formed which has the same cavity length as the laser diode wafer and a bar length between widths. The InP substrate is cut so that different width becomes several millimeters. An inclined coating settlement object is placed at one side of the wafer, and then the dummy bar is placed beside the object. A laser diode bar(1) is stood so that an active layer(2) portion is set in an opposite direction.
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