发明名称 |
Lateral MOSFET having a barrier between the source/drain regions and the channel region |
摘要 |
A lateral MOSFET (100) and a method for making the same. A two layer raised source/drain region (106) is located adjacent a gate structure (112). The first layer (106a) of the raised source drain is initially doped p-type and the second layer (106b) of the raised source/drain region is doped n-type. P-type dopants from first layer (106a) are diffused into the substrate to form a pocket barrier region (105). N-type dopants from second layer (106b) diffuse into first layer (106a) so that it becomes n-type and into the substrate to form source/drain junction regions (104). P-type pocket barrier region (105) thus provides a barrier between the source/drain junction regions (104) and the channel region (108).
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申请公布号 |
US6127233(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19980205346 |
申请日期 |
1998.12.03 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RODDER, MARK S. |
分类号 |
H01L29/78;H01L21/28;H01L21/336;H01L29/08;H01L29/10;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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