发明名称 |
Semiconductor laser device and method of fabricating the same |
摘要 |
<p>An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from W2 to W1 as the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width W2 at its lower end and an upper layer having a width W1 lager than the width W2. Embodiments comprise nitride based semiconductors such as GaN. <IMAGE></p> |
申请公布号 |
EP1039600(A2) |
申请公布日期 |
2000.09.27 |
申请号 |
EP20000302341 |
申请日期 |
2000.03.22 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
GOTO, TAKENORI;HAYASHI, NOBUHIKO |
分类号 |
H01L33/06;H01L33/14;H01L33/32;H01S5/065;H01S5/22;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01S5/223 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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