| 摘要 |
PURPOSE: A laser diode and a manufacturing method thereof are provided to enable index wave-guiding by improving the VSIS structure, to simplify the horizontal mode control, to allow the chip have low oscillating current and low astigmatism. CONSTITUTION: In the laser diode, a buffer layer of p-type GalnP(28) is formed on a p-type GaAs substrate(21). A current limiting layer of n-type GaAs(22) is formed on the buffer layer(28). The current limiting layer(22) has a V-shaped open area on the center to expose the buffer layer(28). A first lower clad layer of p-type AlGalnP(23) is formed on the exposed area of the buffer layer(28). A second lower clad layer of p-type AlGalnP(23') is formed on the first lower clad layer(23). Both of the clad layers(23,23') have a convex shape upward. The two clad layers(23,23') forms a virtually single layer. An active layer of n-type GalnP(24) and a higher clad layer of n-type AlGalnP(25) are formed in turn on the second lower clad layer(23').
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