发明名称 |
CLEANING METHOD OF CONTACT HOLE |
摘要 |
PURPOSE: A cleaning method of contact hole is to prevent corrosion of a metal interconnection line and simultaneously remove polymer and native oxide while removing a photoresist pattern. CONSTITUTION: A cleaning method of contact hole comprises the steps of: etching an insulating layer(12) formed on a metal interconnection line(10) using a photoresist pattern as a mask to form a contact hole(16); and cleaning the contact hole using a mixed cleaning solution including a first solution capable of removing the photoresist pattern, a second solution capable of removing a native oxide layer grown on the bottom place of the contact hole and a third solution capable of preventing the corrosion of the metal interconnection line. The first solution is a solution into which O3 is dissolved in deionized(DI) water.
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申请公布号 |
KR20000055594(A) |
申请公布日期 |
2000.09.15 |
申请号 |
KR19990004287 |
申请日期 |
1999.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, YONG JUN;YOON, YEONG HWAN |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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