发明名称 CLEANING METHOD OF CONTACT HOLE
摘要 PURPOSE: A cleaning method of contact hole is to prevent corrosion of a metal interconnection line and simultaneously remove polymer and native oxide while removing a photoresist pattern. CONSTITUTION: A cleaning method of contact hole comprises the steps of: etching an insulating layer(12) formed on a metal interconnection line(10) using a photoresist pattern as a mask to form a contact hole(16); and cleaning the contact hole using a mixed cleaning solution including a first solution capable of removing the photoresist pattern, a second solution capable of removing a native oxide layer grown on the bottom place of the contact hole and a third solution capable of preventing the corrosion of the metal interconnection line. The first solution is a solution into which O3 is dissolved in deionized(DI) water.
申请公布号 KR20000055594(A) 申请公布日期 2000.09.15
申请号 KR19990004287 申请日期 1999.02.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, YONG JUN;YOON, YEONG HWAN
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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