| 摘要 |
PROBLEM TO BE SOLVED: To test many semiconductor parts concurrently in parallel by providing a conductive layer made of a conductive material on an insulating layer formed on a silicon base with a slant support section and protruded from the slant support section. SOLUTION: A boron-doped layer 148 is formed on a silicon board 140, and a portion 143 not doped with boron is determined on the boron-doped layer 148. A dielectric layer 152 made of SiO2 is provided on the boron-doped layer 148 as an insulator. A SiO2 layer 154 is provided on the bottom face of the silicon board 140 as an etching mask. Anisotropic etching is applied to the silicon board 140. A slant section is formed along the (111) crystalline plane of the silicone board 140, then a photolithography process is conducted, and a conductive layer 135 is formed by plating.
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