| 摘要 |
In the conventional bump forming method that can be applied to a semiconductor device (1) in which a large number of bumps (4) are required to form, there are various limitations to the material of which the bumps are made, to enough cubic volume of bumps and to small scattering of the bump height. According to the invention, solder balls (3) and a tool (2) having a large number of through-holes (6) are used, and under the condition that the through-holes of the tool are aligned with the pads (5) of the semiconductor device, the solder balls are charged into the through-holes, pressed to be fixed on the pads, and then reflowed to form bumps (4) . <IMAGE> |
