MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To optimize the concentration profile of halogen elements of a gate insulating film or a substrate. SOLUTION: This is the manufacturing method of a semiconductor device which has a gate electrode 54 made via a gate insulating film 53 on a first conductivity semiconductor substrate 51 and second conductivity diffused layer 55 made in the regions corresponding to both ends of this gate electrode and to serve as a source and a drain. At this time, this manufacturing method has a process of forming an insulating film 56 containing halogen elements at the flank, at least of the gate electrode and a process of introducing the halogen elements contained in this insulating film into the surface region of the gate insulating film and the semiconductor substrate through heat treatment.