| 摘要 |
PROBLEM TO BE SOLVED: To form a buried layer self-aligned with a gate and a channel by solving the problem when introducing a buried layer, which is heavily-doped with impurities, having an opposite conductivity which is opposite to the conductivity of the source and the drain, along the width of a channel. SOLUTION: This transistor has a dielectric layer, a gate conductor, and a buried region, and the dielectric layer is arranged to be fit for use as the gate dielectric above the semiconductor body 10 between a first region and a second region, and the gate conductor is so arranged above the dielectric layer as to be used as the gate 18, and the buried region is of first conductivity and moreover has impurity concentration higher than the semiconductor body 10, and it is arranged basically apart from the surface of the semiconductor body 10, between the first region and the second region, and the buried region is aligned with the gate conductor.
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