发明名称 |
VERTICAL CAVITY SURFACE EMITTING LASER |
摘要 |
PROBLEM TO BE SOLVED: To stabilize a vertical cavity surface emitting laser by alternately laminating first and second semiconductor layers to form a first distributed Bragg reflection mirror, alternately laminating third and fourth semiconductor layers to form a second distributed Bragg reflection mirror, and forming such that the optical length of the semiconductor layers and protective layers is a specified wavelength of an oscillation light obtained from an active layer. SOLUTION: A first n-type distributed Bragg reflection mirror 103 is formed through an n-type GaAs buffer layer 102 on an n-type GaAs substrate 101, this mirror 103 is composed of alternately laminated n-type AlGaAs low- refractive index layers and n-type AlGaAs high-refractive index layers, and a second n-type distributed Bragg reflection mirror 107 is formed on the first mirror 103 through an active layer 105 sandwiched between upper and lower spacers 104, 106 with alternately laminated low-refractive index layers and high-refractive index layers such that the optical length of the refractive index layers and a protective layer 108 is quarter wavelength of the oscillation light of the active layer 105.
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申请公布号 |
JP2000164982(A) |
申请公布日期 |
2000.06.16 |
申请号 |
JP19980339121 |
申请日期 |
1998.11.30 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT>;NTT ELECTORNICS CORP |
发明人 |
KAGAWA TOSHIAKI;UENOHARA HIROYUKI;TATENO KOTA;TADANAGA OSAMU;AMANO CHIKARA;NAKAJIMA NAGAAKI;FUKUDA MITSUO;TAKESHITA TATSUYA;ITAYA YOSHIO;SUGO MITSURU |
分类号 |
H01S5/00;H01S5/183;(IPC1-7):H01S5/183 |
主分类号 |
H01S5/00 |
代理机构 |
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