发明名称 VERTICAL CAVITY SURFACE EMITTING LASER
摘要 PROBLEM TO BE SOLVED: To stabilize a vertical cavity surface emitting laser by alternately laminating first and second semiconductor layers to form a first distributed Bragg reflection mirror, alternately laminating third and fourth semiconductor layers to form a second distributed Bragg reflection mirror, and forming such that the optical length of the semiconductor layers and protective layers is a specified wavelength of an oscillation light obtained from an active layer. SOLUTION: A first n-type distributed Bragg reflection mirror 103 is formed through an n-type GaAs buffer layer 102 on an n-type GaAs substrate 101, this mirror 103 is composed of alternately laminated n-type AlGaAs low- refractive index layers and n-type AlGaAs high-refractive index layers, and a second n-type distributed Bragg reflection mirror 107 is formed on the first mirror 103 through an active layer 105 sandwiched between upper and lower spacers 104, 106 with alternately laminated low-refractive index layers and high-refractive index layers such that the optical length of the refractive index layers and a protective layer 108 is quarter wavelength of the oscillation light of the active layer 105.
申请公布号 JP2000164982(A) 申请公布日期 2000.06.16
申请号 JP19980339121 申请日期 1998.11.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NTT ELECTORNICS CORP 发明人 KAGAWA TOSHIAKI;UENOHARA HIROYUKI;TATENO KOTA;TADANAGA OSAMU;AMANO CHIKARA;NAKAJIMA NAGAAKI;FUKUDA MITSUO;TAKESHITA TATSUYA;ITAYA YOSHIO;SUGO MITSURU
分类号 H01S5/00;H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/00
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