Stripping method for photoresist used as mask in Ch4/H2 based reactive ion etching (RIE) of compound semiconductors

摘要

A method for stripping photoresist used as an etch mask in carbon based reactive ion etching includes flood exposing a patterned photoresist with a light and cyclically exposing the photoresist with an oxygen plasma in between the carbon based plasma. The step of cyclically exposing occurs after the step of flood exposing. The step of flood exposing includes the step of decomposing photosensitive compounds in the photoresist, while the step of cyclically exposing includes the step of cyclically removing layers of the photoresist.