Connection is produced to a metal contact, e.g. a tungsten contact of a semiconductor device, by using an oxygen plasma containing water vapor for photolacquer layer ashing

摘要

Connection production to a metal contact (206) is by using an oxygen plasma containing water vapor for ashing a photolacquer layer (218). Connection production for a dielectric layer (204) containing a metal contact (206) comprises (a) using a photolacquer layer (218) to form a metal conductor (210) from a metal layer (212) on the dielectric layer (204); and (b) removing the photolacquer layer using an oxygen plasma containing water vapor diluent to prevent charge accumulation on the metal contact surface. Independent claims are also included for the following: (i) connection production by applying a metal layer (212) on a substrate (200) with a metal contact (206), applying a photolacquer layer (218) on the metal layer to form a metal conductor (210) from the metal layer and to expose part of the metal contact (206), supplying water vapor into an oxygen plasma for removal of the photolacquer layer and wet cleaning the substrate; (ii) corrosion-free production of connections to a tungsten contact on a substrate by removing a photolacquer layer (218), used to form a metal conductor (210) on the substrate (200), by means of a plasma containing oxygen and an equal or greater quantity of water vapor; and (iii) corrosion-free production of connections to a tungsten contact on a substrate by removing a photolacquer layer (218), used to form a metal conductor (210) on the substrate (200), by means of a plasma comprising an oxygen plasma and a pure water vapor plasma with a flow velocity of 300-500 sccm for 20-30 sec.