发明名称 |
Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus |
摘要 |
A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.
|
申请公布号 |
US6057247(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980179936 |
申请日期 |
1998.10.28 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
IMAI, SHINICHI;JIWARI, NOBUHIRO |
分类号 |
H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|