| 摘要 |
PURPOSE: A method for fabricating a thin film transistor is provided to allow the formation of an ohmic contact layer at low temperature and thereby to obtain an excellent ohmic characteristic. CONSTITUTION: In the method, the first metal layer used as source and drain electrodes(203,205) is formed on a transparent insulating substrate(200), and a benzocyclobutene(BCB) layer is then formed on the first metal layer(203,205). The first metal layer(203,205) is made of copper, chromium or titanium, and the BCB layer includes silicon. Next, the first metal layer(203,205) and the BCB layer are treated with heat, so that a silicide layer(207) is formed at an interface between the first metal layer and the BCB layer by diffusion of metal into the BCB layer. The BCB layer is then removed, and a semiconductor layer(208) such as an amorphous silicon layer is formed on the silicide layer(207). Next, a gate insulating layer(209) is formed on the semiconductor layer(208), and the second metal layer used as a gate electrode(210) is formed on the gate insulating layer(209).
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