Process for generating a space in a structure

摘要

PCT No. PCT/DE96/01277 Sec. 371 Date Feb. 4, 1998 Sec. 102(e) Date Feb. 4, 1998 PCT Filed Jul. 12, 1996 PCT Pub. No. WO97/06556 PCT Pub. Date Feb. 20, 1997In a method for the production of a spacer layer in a structure in a first step a structure is produced by anisotropic dry etching, and in a further step an oxide layer is deposited with an organic silicon precursor at a pressure of p=0.2-1 bar and a temperature of 200 DEG C. to 400 DEG C.