| 摘要 |
PROBLEM TO BE SOLVED: To select and activate a memory bank efficiently by providing means for selecting one corresponding group from a plurality of divided groups of select line in response to an address information signal and pulling down the voltage level of a nonselected line. SOLUTION: In response to block select control signals BKLBi, BKLTi, BKHBi and BKHTi, a block select circuit activates a block select line BSLi and a ground select line. A block select line BSLi<0> is linked with CMOS transfer gates T5, T7 linked with a path for dividing into two and BSLi<1> is linked with CMOS transfer gates T6, T8. When the block select lines BSLi<0>, BSLi<1> are not selected, NMOS transistors NM13-16 constitute a discharge circuit and pull down the voltage level of the BSLi<0>, BSLi<1> to the substrate voltage (or ground voltage). |
