BIT LINE OF DYNAMIC RANDOM ACCESS MEMORY AND MANUFACTURING PROCESS OF CAPACITOR CONTACT HOLE

摘要

PROBLEM TO BE SOLVED: To form relatively large contact holes simultaneously increasing the integrating density. SOLUTION: Two times of lithographic and etching step are performed on the same thin polysilicon films 12 using the first and second two different photomasks to as to form the first and second two different cross patterns. In such a constitution, the patterns of respective bit line contact hole are provided in each cross pattern, so that the interval between the contact holes may be shortened for increasing the integrating density of element also forming relatively large contact holes.