发明名称 |
Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal |
摘要 |
A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
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申请公布号 |
US6019837(A) |
申请公布日期 |
2000.02.01 |
申请号 |
US19970978282 |
申请日期 |
1997.11.25 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD.;MITSUBISHI MATERIALS SILICON CORPORATION;KAGAKU GIJUTSU SINKOU JIGYO DAN;TOSHIBA CERAMICS CO., LTD. |
发明人 |
MAEDA, SUSUMU;ABE, KEISEI;TERASHIMA, KAZUTAKA;NAKANISHI, HIDEO |
分类号 |
C30B15/00;C30B15/20;C30B29/06;H01L21/208;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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