| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a correcting method and a correcting device for a pattern, capable of correcting a pattern defect with high accuracy and capable of suppressing deterioration of, in particular, a non-rectangular pattern shape, in the case of pattern correction of a photomask, a wafer, or the like, used in a semiconductor manufacturing process. SOLUTION: This pattern correcting method has a process (S1) for forming an exposure pattern by exposing a photomask according to exposure data by the use of a beam irradiating device, a process (S2) for inspecting whether a pattern defect exists or not by a defect inspecting device, a process (S3) for educing the position of the pattern defect as coordinate data, a process (S4) for causing the reticle position at the time of exposure to conform with the position at the time of correction and inputting the coordinate data into the beam irradiating device, a process (S5) for determining a field requiring correction, and a process (S6) for correcting a defective portion by means of superimposed exposure.</p> |
