| 摘要 |
There is provided a method of fabricating a semiconductor, including the steps, in sequence, of (a) forming a first interlayer insulating film over a semiconductor substrate, (b) forming an electrically conductive contact hole in the first interlayer insulating film, (c) forming a second interlayer insulating film over the first interlayer insulating film, (d) forming a photosensitive organic film over the second interlayer insulating film, (e) forming a via-hole passing through the photosensitive organic film and the second interlayer insulating film, the via-hole being in vertical alignment with the contact hole, (f) forming a film so that the film covers the photosensitive organic film therewith and fills the via-hole therewith, (g) exposing the film to plasma so that a portion of the film lying over the photosensitive organic film is removed, (h) removing both the photosensitive organic film and the film remaining in the via-hole, and (i) forming a wire above the via-hole. In accordance with the above mentioned method, the cured layer formed on the photosensitive organic film is removed by being exposed to plasma in oxygen atmosphere with the via-hole being filled with the film. Thus, the second interlayer insulating film defining an inner wall of the via-hole is not exposed directly to oxygen plasma, and hence is not etched by the plasma. As a result, it is possible to prevent that the via-hole has a greater side length than a designed side length.
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