| 摘要 |
For decreasing overlap widths between the gate electrode and the source/drain electrode, a photoelectric conversion apparatus is formed through a step of forming a first conductive layer on a substrate and forming a first electrode pattern therefrom, a step of forming a first insulating layer, a semiconductor layer, and a second insulating layer so as to cover the first electrode pattern, a step of patterning the second insulating layer, and a step of converting a part of a surface of the semiconductor layer into N- or P-conduction type.
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