发明名称 Using (LaNiO3) X(TiO2) 1-X and (LaNiO3) X(Ta2O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks
摘要 An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO3 and the second material is either TiO2 or Ta2O5. The first and second materials are combined to produce composites of either (LaNiO3)x(TiO2)1-x or (LaNiO3)x(Ta2O5)1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO3 and either TiO2 or Ta2O5 uses rf-magnetron sputtering to form the (LaNiO3)x(TiO2)1-x or (LaNiO3)x(Ta2O5)1-x films on a transparent quartz substrate.
申请公布号 US5981109(A) 申请公布日期 1999.11.09
申请号 US19980015242 申请日期 1998.01.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TU, CHIH-CHIANG;GAN, JON-YIEW;WU, TAI-BOR;CHENG, CHAO-CHEN
分类号 G06F1/20;G03F1/00;G03F1/08;G06F1/04;H01L21/822;H01L27/04;(IPC1-7):G03F9/00 主分类号 G06F1/20
代理机构 代理人
主权项
地址