INCOMPLETE OVERLAP MAGNETIC RAM CELL

摘要

PROBLEM TO BE SOLVED: To make an electric interaction generate only at a favorable part by allowing a first magnetic layer to be changable to one side of two kinds of magnetic states opposing along its axis and allowing the favorable part of the first magnetic layer to place its center around the center point of the axis. SOLUTION: In a magnetic tunnel junction device 109, a tunnel is ristricted in the favorable one part of a free magnetic region 124 by using a smaller tunnel region 122 and the size of a reference magnetic region 120 is made to be the same as that of the tunnel region 122. Insulation regions 1301 , 1302 preventing electric tunnels due to remaining parts of the layer 124 existing at the outside of the favorable part are used in an adjacent relation with the tunnel region 122 and the reference region 120 in order to prevent interactions in areas existing at the outside of the favorable part of the free magnetic region 124. Thus, tunnels along arbitrary axes of the free region are also restricted similarly in order to restrict the tunnel at the favorable part which although exists at the arbitrary position of the free region.