| 摘要 |
PROBLEM TO BE SOLVED: To form an absorber pattern with high dimensional and positional accuracy. SOLUTION: A heating process device 1 comprises a support stage 7, on which an X-ray mask substrate 13 is placed, and a hot plate 10 for heating a membrane part 16a. On a silicon substrate 14, a recessed part 15 is formed by back-etching as well as a frame part 14 before the membrane part 16a is formed. The support stage 7 is provided with a vertical motion drive means 9 for vertical movement, and the hot plate 10 is allocated so as to face the surface on the opposite side of the recessed part 15 of the membrane part 16a. |
