| 摘要 |
In a method of making a flip-chip bonded GaAs-based opto-electronic device, removal of the GaAs substrate is facilitated by provision of a lattice matched (AlxGa1-x)InP etch stop layer, exemplarily a Ga0.51In0.49P layer, and use of an etchant that isotropically etches GaAs such that an essentially mirror-like etch stop layer surface results, and that preferably exhibits an etch rate ratio of at least 200:1 for GaAs and the etch stop layer, respectively. Use of the novel substrate removal method can substantially increase device yield, and facilitate manufacture of large device arrays, e.g., arrays of detector/modulator diodes flip-chip bonded to Si CMOS chips.
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