| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a multiple-valued semiconductor non-volatile storage for greatly improving reliability without greatly sacrificing the recording efficiency of a memory. SOLUTION: A semiconductor non-volatile storage for recording digital data that are obtained by converting analog data into digital data has first memory array regions 11 and 12 where single-bit digital information is recorded in each memory cell and second memory array regions 13 and 14 where records two-bit digital information is recorded in each memory cell. The bit data on the MSB side of the digital data is divided into the bit data of an LSB side, the bit data of the MSB side is recorded in the first memory array regions, and the bit data of the LSB side is recorded in the second memory array regions.</p> |
