Process and apparatus for producing a single crystal

摘要

A semiconductor single crystal is pulled from a melt in a side heated crucible while an annular melt region around the crystal is additionally heated by an annular heater above the melt. An Independent claim is also included for equipment for carrying out the above process, in which an annular heater surrounds the crystal and is located above the melt for radiant heating of an annular region of the melt around the crystal. Preferred Features: The annular heater is a reflector, a resistance heater or an induction heater.