| 发明名称 |
MEMORY DEVICE HAVING A CRESTED TUNNEL BARRIER |
| 摘要 |
A nonvolatile, high-speed, bit-addressable memory device is disclosed. A tunnel barrier layer is disposed between a charge supply medium and a charge storage medium, with the tunnel barrier layer having a crested energy profile with a maximum half-way between the charge storage layer and the charge supply layer.
|
| 申请公布号 |
WO9919913(A1) |
申请公布日期 |
1999.04.22 |
| 申请号 |
WO1998US21429 |
申请日期 |
1998.10.09 |
| 申请人 |
THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK |
发明人 |
LIKHAREV, KONSTANTIN, K. |
| 分类号 |
H01L21/8247;B82B1/00;H01L27/115;H01L29/423;H01L29/51;H01L29/66;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
