发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To surely read out data from a cell at high speed and to arrange easily a metal wire connected to a bit line terminal and a ground line terminal when integration density of a circuit is increased. SOLUTION: Bit line spreading wirings 1 of total four lines are connected individually to each drain of a cell of each column (four columns) from two bit line terminals D0, D1, also, four bit line spreading wirings from one virtual ground line terminal out of virtual ground line terminals VG1-VG3 are connected individually to each source of a cell of the four columns. Also, bank selection transistors BT1-BT6 are arranged for each bit line spreading wirings 1, 2 respectively.
申请公布号 JPH1196780(A) 申请公布日期 1999.04.09
申请号 JP19970253228 申请日期 1997.09.18
申请人 NEC CORP 发明人 TOGAMI TETSUHARU;SUZUKI KAZUTERU
分类号 G11C16/06;G11C8/12;G11C16/04;G11C17/12;G11C17/18;H01L21/8246;H01L21/8247;H01L27/112;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/06
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