| 摘要 |
PROBLEM TO BE SOLVED: To enable accurate detection of the end point of an etch process and other characteristics within a chamber, by analyzing multiple process parameters and statistically correlating these parameters to detect a change in process characteristics. SOLUTION: A semiconductor wafer processing system 100 includes a reaction chamber 102 having a wafer supporting pedestal or suscepter 106, an RF power source 108, a chuck power source 112, and a system controller 110. The RF power source 108 generates an RF parameter. A signal analyzer 122 obtains data from multiple sources within this semiconductor wafer processing system. By correlating a plurality of signals and parameters monitored by the signal analyzer 122, the signal-to-noise ratio(SNR) is made greater than the SNR of any single parameter signal. Thus, from the plurality of parameters, the detected signals can be correlated so as to be much greater than the background noise of the system. |
