| 摘要 |
PCT No. PCT/EP94/02400 Sec. 371 Date Apr. 12, 1996 Sec. 102(e) Date Apr. 12, 1996 PCT Filed Jul. 21, 1994 PCT Pub. No. WO95/04171 PCT Pub. Date Feb. 9, 1995A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved. |
| 申请人 |
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE;FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV, 80636 MUENCHEN, DE |
发明人 |
NIEMANN, EKKEHARD, D-63447 MAINTAL, DE;SCHNEIDER, JUERGEN, D-79199 KIRCHZARTEN, DE;MUELLER, HARALD, D-79856 HINTERZARTEN, DE;MAIER, KARIN, D-79102 FREIBURG, DE |
